Japan Prize Laureates

Laureates of the Japan Prize

Prof. Russell Dean Dupuis

Russell Dean Dupuis, Ph.D.

  • Nationality:
    USA
  • Date of Birth:
    9 July 1947 (77)

Outline of Achievements

Outline of Achievements

The 2025 Japan Prize

  • Field:
    Materials Science and Production
  • Achievement:
    Development of metalorganic chemical vapor deposition technology for compound semiconductor electronic and optoelectronic devices, and pioneering contribution to its large-scale commercialization

Education

1970 B.S. in Electrical Engineering, University of Illinois at Urbana-Champaign
1971 M.S. in Electrical Engineering, University of Illinois at Urbana-Champaign
1973 Ph.D., Electrical Engineering, University of Illinois at Urbana-Champaign

Professional Experience

1973-1974 Technical Staff, Texas Instruments
1975-1979 Technical Staff, Rockwell International
1979-1985 Technical Staff, AT&T Bell Laboratories
1986-1989 Distinguished Member of Technical Staff, AT&T Bell Laboratories
1989-2003 Judson S. Swearingen Regents Chair in Engineering, The University of Texas at Austin
1989-2003 Professor of Electrical and Computer Engineering, The University of Texas at Austin
1989-2003 Professor of Materials Science and Engineering, The University of Texas at Austin
2003- Director, Center for Compound Semiconductors, Georgia Institute of Technology
2003- Professor of Electrical and Computer Engineering, Georgia Institute of Technology
2003- Professor of Materials Science and Engineering, Georgia Institute of Technology
2003- Georgia Research Alliance Eminent Scholar, Georgia Institute of Technology
2003-2022 Steve W. Chaddick Chair in Electro-Optics, Georgia Institute of Technology
2023- Steve W. Chaddick Endowed Chair Emeritus, Georgia Institute of Technology

Academic Journals

  • R. D. Dupuis, P. D. Dapkus, R. D. Yingling, and L. A. Moudy, “High Efficiency GaAlAs/GaAs Heterostructure Solar Cells Grown by Metalorganic Chemical Vapor Deposition”, Appl. Phys. Lett. Vol. 31, No. 3, pp. 201-203 (1977).
  • R. D. Dupuis and P. D. Dapkus, “Room-Temperature Operation of Ga1-xAlxAs/GaAs Double-Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition”, Appl. Phys. Lett., Vol. 31, No. 7, pp. 466-468 (1977).
  • R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., E. A. Rezek, and R. Chin, “Room-Temperature Laser Operation of Quantum-Well Ga1-xAlxAs-GaAs Laser Diodes Grown by Metalorganic Chemical Vapor Deposition”, Appl. Phys. Lett., Vol. 32, No. 5, pp. 295-297 (1978).
  • R. D. Dupuis, ”Metalorganic Chemical Vapor Deposition of III-V Semiconductors”, Science, Vol. 226, No. 4675, pp. 623-629 (1984).

Awards

1985 IEEE Morris N. Liebmann Memorial Award
1986 Distinguished Member of the Technical Staff, AT&T Bell Laboratories
1986 Fellow of the Institute of Electrical and Electronics Engineers
1986 Young Scientist Award of the Gallium Arsenide and Related Compounds Conference
1987 Distinguished Alumnus Award, Dept. of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign
1989 Elected to National Academy of Engineering
1995 IEEE/LEOS Award for Engineering Achievement
1997 University of Illinois at Urbana-Champaign Alumni Loyalty Award
2000 Fellow of the Optical Society of America
2001 Licensed Professional Engineer, The State of Texas
2002 National Medal of Technology Laureate
2004 Distinguished Alumnus Award, College of Engineering, University of Illinois at Urbana-Champaign
2004 The Minerals, Metals and Materials Society (TMS) John Bardeen Award
2007 IEEE Edison Medal
2015 National Academy of Engineering Charles Stark Draper Engineering Award
2021 Queen Elizabeth II Prize in Engineering
2022 Benjamin Franklin Medal in Engineering
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